发明名称 |
PIEZOELECTRIC DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
<p>A piezoelectric device includes an upper contact layer (35) arranged between a piezoelectric layer (32) and an upper electrode layer (34) in such a manner that the upper contact layer (35) is in contact with the piezoelectric layer (32) and the upper electrode layer (34). The upper contact layer (35) is formed by a first tungsten layer (47) made of tungsten containing a mixture of a phase and ß phase and a second tungsten layer (48) made of tungsten of a phase. The first tungsten layer (47) is formed so as to be in contact with the piezoelectric layer (32). Thus, it is possible to obtain a piezoelectric device which has apreferable contact with both of the piezoelectric layer and the electrode layer and further reduce the reference point voltage fluctuation amount in a high-temperature operation, thereby improving the reliability.</p> |
申请公布号 |
WO2008132847(A1) |
申请公布日期 |
2008.11.06 |
申请号 |
WO2008JP01074 |
申请日期 |
2008.04.24 |
申请人 |
PANASONIC CORPORATION;HAYASHI, MICHIHIKO;YASUMI, MASAHIRO;OKAMOTO, SHOJI |
发明人 |
HAYASHI, MICHIHIKO;YASUMI, MASAHIRO;OKAMOTO, SHOJI |
分类号 |
H01L41/09;B41J2/045;B41J2/055;G01C19/56;G01C19/5607;H01L41/187;H01L41/29;H01L41/316;H01L41/319 |
主分类号 |
H01L41/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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