发明名称 METHOD FOR TRANSFERRING AN EPITAXIAL LAYER
摘要 <p>A method for producing an epitaxial layer (3) comprising: a fabrication step of a structure (10) comprising: formation of an intermediate layer (2) on a donor substrate (1); and formation (S2) of the epitaxial layer (3) on the intermediate layer (2) by epitaxy; the melting temperature of the intermediate layer (2) being lower than the melting temperature of the epitaxial layer (3); and a detachment step (S5) of the epitaxial layer (3) from the donor substrate (1) by applying at least one thermal treatment, said thermal treatment being performed at a temperature comprised between the melting temperature of the intermediate layer (2) and the melting temperature of the epitaxial layer (3).</p>
申请公布号 WO2008132569(A1) 申请公布日期 2008.11.06
申请号 WO2008IB00967 申请日期 2008.04.15
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;LE VAILLANT, YVES-MATTHIEU 发明人 LE VAILLANT, YVES-MATTHIEU
分类号 H01L21/762;H01L21/20;H01L21/324 主分类号 H01L21/762
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