发明名称 |
METHOD FOR TRANSFERRING AN EPITAXIAL LAYER |
摘要 |
<p>A method for producing an epitaxial layer (3) comprising: a fabrication step of a structure (10) comprising: formation of an intermediate layer (2) on a donor substrate (1); and formation (S2) of the epitaxial layer (3) on the intermediate layer (2) by epitaxy; the melting temperature of the intermediate layer (2) being lower than the melting temperature of the epitaxial layer (3); and a detachment step (S5) of the epitaxial layer (3) from the donor substrate (1) by applying at least one thermal treatment, said thermal treatment being performed at a temperature comprised between the melting temperature of the intermediate layer (2) and the melting temperature of the epitaxial layer (3).</p> |
申请公布号 |
WO2008132569(A1) |
申请公布日期 |
2008.11.06 |
申请号 |
WO2008IB00967 |
申请日期 |
2008.04.15 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;LE VAILLANT, YVES-MATTHIEU |
发明人 |
LE VAILLANT, YVES-MATTHIEU |
分类号 |
H01L21/762;H01L21/20;H01L21/324 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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