| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate type field-effect transistor preventing gate insulation breakdown resulted from a gate insulating film and characteristic degradation by hot carrier. SOLUTION: In a field-effect transistor whose gate electrode is insulated from a semiconductor substrate surface, gate air gap is provided at least between a gate electrode surface and the semiconductor substrate surface which is opposite to the gate electrode surface, and the gate air gap is filled with a gas. COPYRIGHT: (C)2009,JPO&INPIT |
