| 摘要 |
PROBLEM TO BE SOLVED: To easily manufacture an MIS transistor as well as form a gate insulating film with high reliability, in a semiconductor integrated circuit device incorporating a plurality of kinds of MIS transistor each having a gate insulating film different in thickness from each other. SOLUTION: A silicon oxide film 9 in a region where the gate insulating film with small effective thickness is formed is removed by using a hydrofluoric acid solution after forming a silicon oxide film 9 on the surface of a semiconductor substrate 1. Thereafter, a high dielectric constant insulating film 10 is formed on the semiconductor substrate 1, thereby forming the two kinds of the gate insulating films as follows on the semiconductor substrate 1: a gate insulating film 12 consisting of a multilayer film of the dielectric constant insulating film 10 and silicon oxide film 9; and a gate insulating film 11 consisting of the high dielectric constant insulating film 10. COPYRIGHT: (C)2009,JPO&INPIT
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