| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an MOSFET whose threshold voltage can be adjusted without performing channel doping. SOLUTION: The present invention is embodied as the manufacturing method of the MOSFET. The manufacturing method includes the stages of: preparing a semiconductor substrate having a source region, a drain region, and a channel region connecting the source region and drain region; forming a gate insulating film on a top surface of the channel region; and forming a gate electrode of a metal compound material on the gate insulating film by a reactive sputtering method. In the manufacturing method of the present invention, the flow rate ratio of noble gas and reactive gas used for the reactive sputtering method is adjusted according to a target threshold voltage of the MOSFET. COPYRIGHT: (C)2009,JPO&INPIT
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