| 摘要 |
A manufacturing method of a semiconductor device is provided to increase the distance between the channel region of the recess gate and the channel region of the passing gate. A manufacturing method of a semiconductor device includes the step for forming the hard mask which exposes the element isolation region on the semiconductor board; the step for forming the trench by etching the element isolation region of the exposed semiconductor substrate; the step for forming the first insulating layer with the depth lower than that of the trench within the trench; the step for forming the etch prevention film(208) on the surface of the hard mask including the first insulating layer; the step for forming the second insulating layer on the etch prevention film; the step for planarizing the second insulating layer and the etch prevention film in order to expose the hard mask; the step for forming the element isolation film(212) having the etch prevention film; the step for forming the groove by recessing the gate forming area of the semiconductor board; the step for forming gate on the semiconductor substrate including groove.
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