IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF

摘要

An image sensor and a method for manufacturing thereof are provided to improve the sensitivity and saturation level by controlling the ion implantation process. The image sensor includes the active area and the element isolation region(120) formed on the substrate(110); the transistor formed on the active area(150); the photodiode(130) and the transistor region(140) formed in the active area; the photo diode extended area(136) formed in the bottom side of transistor.