| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor that is less apt to break, even if stress is applied from the outside, and to provide a method for manufacturing the same. <P>SOLUTION: A semiconductor layer includes a transistor wherein a channel is formed, and has an element layer 120 wherein an insulating layer is formed at the upper portion and lower portion of the transistor and also a plurality of protruding portion s 103, 103a and 103b formed separately from each other at an interval of from 2 μm to 200 μm on the surface layer of the element layer. The longitudinal elasticity module of material that forms the protruding portion s is set to be lower than the longitudinal elasticity modulus of material that forms the insulating layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
