| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a process for fabricating a silicon carbide semiconductor device in which a CNT can be formed selectively by short-time treatment under low temperature without using a fine particle catalyst. <P>SOLUTION: The process for fabricating a silicon carbide semiconductor device comprises (a) a step for making the surface of SiC 1 amorphous by introducing impurities, (b) a step for forming a CNT 5 on the surface of amorphous SiC 3 by heat treatment, and (c) a step for forming a CNT 5 further thereon by using the CNT 5 as a ground. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
