发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To prevent discharge in a gas introducing path for plasma excitation, in a microwave plasma processing apparatus. SOLUTION: In the plasma processing apparatus for processing a substrate to be processed, a space for plasma excitation and a plasma gas introducing path for the same are separated from each other by a porous medium such as a porous ceramic material, thereby: preventing the plasma excitation in the plasma introducing path; and exciting uniform plasma of high density in a desired plasma excitation space. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2008270839(A) |
申请公布日期 |
2008.11.06 |
申请号 |
JP20080191358 |
申请日期 |
2008.07.24 |
申请人 |
OMI TADAHIRO;TOKYO ELECTRON LTD |
发明人 |
OMI TADAHIRO;HIRAYAMA MASAKI;GOTO TETSUYA |
分类号 |
H01L21/31;C23C16/455;C23C16/511;H01L21/3065 |
主分类号 |
H01L21/31 |
代理机构 |
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