发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To prevent discharge in a gas introducing path for plasma excitation, in a microwave plasma processing apparatus. SOLUTION: In the plasma processing apparatus for processing a substrate to be processed, a space for plasma excitation and a plasma gas introducing path for the same are separated from each other by a porous medium such as a porous ceramic material, thereby: preventing the plasma excitation in the plasma introducing path; and exciting uniform plasma of high density in a desired plasma excitation space. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008270839(A) 申请公布日期 2008.11.06
申请号 JP20080191358 申请日期 2008.07.24
申请人 OMI TADAHIRO;TOKYO ELECTRON LTD 发明人 OMI TADAHIRO;HIRAYAMA MASAKI;GOTO TETSUYA
分类号 H01L21/31;C23C16/455;C23C16/511;H01L21/3065 主分类号 H01L21/31
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