发明名称 |
CONTENT ADDRESSABLE MEMORY CELL INCLUDING A JUNCTION FIELD EFFECT TRANSISTOR |
摘要 |
<p>A semiconductor device that includes a memory cell having a junction field effect transistor (JFET) used to form a content addressable memory (CAM) cell is disclosed. The JFET may include a data storage region disposed between a first and second insulating region. The data storage region provides a first threshold voltage to the JFET when storing a first data value and provides a second threshold voltage to the JFET when storing a second data value. The memory cell is a dynamic random access memory (DRAM) cell and can be used to form a CAM cell. The CAM cell may be a ternary CAM cell formed with as few as two JFETs.</p> |
申请公布号 |
WO2008134688(A1) |
申请公布日期 |
2008.11.06 |
申请号 |
WO2008US61946 |
申请日期 |
2008.04.30 |
申请人 |
DSM SOLUTIONS, INC.;THUMMALAPALLY, DAMODAR, R. |
发明人 |
THUMMALAPALLY, DAMODAR, R. |
分类号 |
H01L27/098;G11C11/403;G11C15/04;H01L27/108 |
主分类号 |
H01L27/098 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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