GaN-BASED LIGHT EMITTING DIODE ELEMENT AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based light emitting diode element constituted by forming an LED structure comprising a GaN-based semiconductor on a surface of a semiconductor, while forming irregularities desirable for the purpose of improving light extraction efficiency on the surface of the substrate.

SOLUTION: The GaN-based light emitting diode element 10 includes the substrate 11 and the GaN-based semiconductor 12. A region 11A in which the irregularities capable of scattering the light are formed is partially provided to the surface of the substrate 11. The GaN-based semiconductor 12 includes a GaN system semiconductor crystal film which has laterally grown from a region 11B where no irregularity is formed on the surface of the substrate 11 to the region 11A where the irregularities are formed. In a desirable manufacturing method, a part of the surface of the substrate having a mirror-polished surface is etched to form the irregularities capable of scattering the light, and the GaN-based semiconductor crystal film is laterally grown from the region where no irregularity is formed to the region where the irregularities are formed.

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