METHOD OF ELIMINATING M-SHAPE ETCHING RATE DISTRIBUTION IN INDUCTIVELY-COUPLED PLASMA REACTOR

摘要

PROBLEM TO BE SOLVED: To provide an induction coupled plasma processing chamber.

SOLUTION: The induction coupled plasma processing chamber has a chamber having an upper wall. A first antenna and a second antenna are arranged, adjoining the upper wall. The first antenna is coaxially provided with the second antenna. A plasma source power supply is connected to the first antenna and the second antenna. The plasma source power supply generates a first RF power for the first antenna and a second RF power for the second antenna. A substrate support member is arranged in the chamber. The size of the first antenna and a distance between the substrate supporting member are so defined as the etching rate of the substrate on the substrate supporting member which is substantially uniform.

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