PHOTOCATALYST SEMICONDUCTOR ELEMENT, ITS PRODUCTION METHOD, PHOTOCATALYST OXIDATION-REDUCTION REACTION APPARATUS AND PHOTOELECTROCHEMICAL REACTION EXECUTING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a photocatalyst semiconductor element consisting of group III to V element nitride semiconductor which can be formed on various substrates and which improves utilization efficiency of a carrier produced by light irradiation and to provide its production method, a photocatalyst oxidation-reduction reaction apparatus and a photoelectrochemical reaction executing method by which oxidation-reduction reaction can be produced by light irradiation.

SOLUTION: The photocatalyst semiconductor element comprises an electroconductive substrate and the group III to V element nitride semiconductor formed thereon in a shape of a dot or in a shape of a rod. A production method of the photocatalyst semiconductor element, the photocatalyst oxidation-reduction reaction apparatus and the photoelectrochemical reaction executing method are also provided.

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