| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can suppress light from being emitted below an undesired portion. SOLUTION: The semiconductor light emitting element 1 has a semiconductor layer 11 in which an n-type clad layer 12, a light active layer 13, and a p-type clad layer 14 are formed on one main surface of an n-type substrate 10 in order, and p-type cap layers 21-23 are formed on the semiconductor layer 11. Moreover on those layers, a first insulating layer 71, a second insulating layer 72, and a metal layer 73 are formed in each predetermined area in order. The etching rate of material of the second insulating layer 72 is set more than the etching rate of material of the first insulating layer 71. COPYRIGHT: (C)2009,JPO&INPIT
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