| 摘要 |
PROBLEM TO BE SOLVED: To prevent the increase of a wiring resistance and the deterioration of wiring reliability by improving the sectional configuration of a tungsten wiring. SOLUTION: At first, a base 100 is prepared to laminate a barrier film 120, a wiring film 130 and a mask film 140 on the base sequentially. The barrier film and the mask film are consisting of the nitride titanium while the wiring film is tungsten. Next, a reflection preventing film 150 is applied on the mask film. Subsequently, a resist film is formed on the reflection preventing film and, thereafter, a resist mask 160 is formed through patterning by photolithography. The resist mask covers a wiring forming region 105 and exposes a wiring not forming region 107. Next, the patterning of the reflection preventing film is carried out by etching employing fluorine series gas. Next, the patterning of the mask film is carried out through etching employing chlorine gas. Next, the patterning of the wiring film is carried out through etching employing the fluorine series gas. COPYRIGHT: (C)2009,JPO&INPIT
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