发明名称 |
MULTI-LEVEL RESISTIVE MEMORY CELL USING DIFFERENT CRYSTALLIZATION SPEEDS |
摘要 |
An integrated circuit includes a first electrode and a second electrode. The integrated circuit includes a first resistivity changing material between the first electrode and the second electrode and a second resistivity changing material between the first electrode and the second electrode. The first resistivity changing material and the second resistivity changing material have different crystallization speeds.
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申请公布号 |
US2008273378(A1) |
申请公布日期 |
2008.11.06 |
申请号 |
US20070743987 |
申请日期 |
2007.05.03 |
申请人 |
PHILIPP JAN BORIS;HAPP THOMAS |
发明人 |
PHILIPP JAN BORIS;HAPP THOMAS |
分类号 |
G11C11/00;H01L47/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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