| 摘要 |
<p>1301585 Electroluminescence PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 13 April 1970 [16 April 1969] 17421/70 Heading C4S [Also in Division H1] A radiation sensitive or electroluminescent device comprises a radiation permeble, electrically conductive layer 2 on which is deposited a metal layer 3 followed by a layer of semiconductor grains, e.g. zinc selenide, the metal being such that when molten it wets the layer 2 less readily than the grains. When the structure is heated in order to melt the metal layer 3, the metal is laterally drawn beneath the grains by capillary action, leaving interruptions 5 between the grains. An insulating binder 6 is provided between the grains and a conductive layer 7 in contact with the grains. The conductive layer 2, which may be of tin oxide and/or indium oxide with additions of antimony or boron, or alternatively of gold, may be deposited on a support 1, e.g. of glass. The metal layer 3 may be of zinc, cadmium, gallium, indium, thallium, antimony, lead, tin, bismuth or tellurium, and may normally make ohmic contact to the grains. The binder 6 may be of polyurethene, and the conductive layer 7 be of copper and make a rectifying control to the grains. Alternatively the layer 3 may make a rectifying contact and the layer 7 an ohmic one. The device may be an electroluminscent panel.</p> |
