发明名称 FERROELECTRIC FILM AND ITS MANUFACTURING METHOD, DIELECTRIC ELEMENT, AND LIQUID DISCHARGE APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To add donor ion of 10 mol% or more to a B site without adding a sintering aid and an acceptor ion in a PZT-based ferroelectric film. <P>SOLUTION: The ferroelectric film has a columnar crystal film structure comprising many columnar crystals and takes as a chief ingredient a perovskite oxide represented by a formula (P):A<SB>1+&delta;</SB>[(Zr<SB>x</SB>Ti<SB>1-x</SB>)<SB>1-y</SB>M<SB>y</SB>]O<SB>z</SB>. In the formula, A is an A site element that is an element of at least one kind taking Pb as a chief ingredient and Zr, Ti, and M are B site elements, respectively. M is an element of at least one kind selected from a group composed of V, Nb, Ta, and Sb. A relation: 0<x&le;0.7, 0.1&le;y&le;0.4, &delta;=0, and z=3 are standard. These values may be shifted from a reference within a range where a perovskite structure can be taken. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008270704(A) 申请公布日期 2008.11.06
申请号 JP20070229786 申请日期 2007.09.05
申请人 FUJIFILM CORP 发明人 SHINKAWA TAKAMI;FUJII TAKAMITSU
分类号 H01L41/18;C23C14/08;C23C14/34;C30B25/06;C30B29/32;H01L21/316;H01L21/8246;H01L27/105;H01L41/09;H01L41/22;H01L41/316;H01L41/39 主分类号 H01L41/18
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