| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem of a performance improving technique in microfabrication of a semiconductor element using actinic rays or radiation, particularly KrF excimer laser light, and to provide a good positive resist composition that simultaneously satisfies high sensitivity, high resolution, substantially no stationary wave and a good pattern profile and a pattern forming method using the composition. <P>SOLUTION: The positive resist composition includes a resin that has a group having absorption at 248 nm at a main chain terminal of the resin. The pattern forming method using the composition is also provided. <P>COPYRIGHT: (C)2009,JPO&INPIT |
