| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which solves problems of a performance improving technique in microfabrication of a semiconductor element using actinic rays or radiation, particularly KrF excimer laser light, electron beams or EUV light, has high sensitivity, small line width roughness and small dependency on density distribution, and ensures good sensitivity and good dissolution contrast even in exposure with EUV light, and a pattern forming method using the same. <P>SOLUTION: The positive resist composition comprises a resin comprising a specific repeating unit having an aromatic ring in a side chain, and having a specific terminal structure, and a compound capable of generating an acid upon irradiation with actinic rays or radiation. The pattern forming method using the same is also provided. <P>COPYRIGHT: (C)2009,JPO&INPIT |
