| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device capable of realizing random access to variable resistance elements which are individual storage elements while improving an integration degree on the circuit arrangement of a memory cell array, by having a nonvolatile memory device equipped with variable resistance elements, realized by a memory cell array of a novel structure different from that of the conventional case. SOLUTION: The nonvolatile memory device is provided with a basic memory unit which includes a source selection transistor having one end corrected to a source line, a plurality of selection transistors interconnected in series, and variable resistance elements for storing bit information, disposed for each cell selection transistor, having one end corrected to the train terminal of the cell selection transistor, and the other end connected to a bit line. The source selection transistor and the cell selection transistor disposed between one end of the access target variable resistance element and the source line, are controlled to be conductive. COPYRIGHT: (C)2009,JPO&INPIT |
