| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor optical element for effectively suppressing the diffusion of Zn to an active layer, and its manufacturing method. SOLUTION: First, a semiconductor mesa part 2B including an active layer 30 is formed on a first conducting type semiconductor substrate 10. Then, a buried layer 70A is formed so as to bury the semiconductor mesa part 2B. The buried layer 70A includes a p-type first buried layer 70a<SB>1</SB>, a p-type fourth buried layer 70b<SB>2</SB>and a p-type second buried layer 70b<SB>1</SB>. The p-type first buried layer 70a<SB>1</SB>is composed of InP doped with n-type impurities and p-type impurities (Zn). Then, the cap layer 50 of the semiconductor mesa part 2B is removed. Thus, the semiconductor mesa part 2M is obtained. Then, a clad layer 40b and a contact layer 80 are formed on the semiconductor mesa part 2M and the buried layer 70A. Then, an electrode 90a and an electrode 90b are formed. COPYRIGHT: (C)2009,JPO&INPIT
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