| 摘要 |
PROBLEM TO BE SOLVED: To provide a transparent conductive gas barrier film that can be manufactured in a single process of only the vacuum process, while exhibiting excellent solvent resistance. SOLUTION: On at least one side of a plastic film (1), an ion-implanted layer (2) with layer thickness of not less than 15 nm but not more than 150 nm is formed by utilizing the plasma ion implantation method using at least one kind of gas among noble gas, hydrogen, nitrogen, and ammonia gas as a plasma source. A transparent conductive gas barrier film is structured by forming a gas barrier layer (3) and a transparent conductive layer (4) in such an order on the ion-implanted layer. COPYRIGHT: (C)2009,JPO&INPIT
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