发明名称 PATTERN DEFECT INSPECTION APPARATUS AND METHOD
摘要 A pattern defect inspection apparatus capable of detecting minute defects on a sample with high sensitivity without generating speckle noise in signals is realized. Substantially the same region on a surface of a wafer is detected by using two detectors at mutually different timings. Output signals from the two detectors are summed and averaged to eliminate noise. Since a large number of rays of illumination light are not simultaneously irradiated to the same region on the wafer, a pattern defect inspection apparatus capable of suppressing noise resulting from interference of a large number of rays, eliminating noise owing to other causes and detecting with high sensitivity minute defects on the sample without the occurrence of speckle noise in the signal can be accomplished.
申请公布号 US2008273193(A1) 申请公布日期 2008.11.06
申请号 US20080113781 申请日期 2008.05.01
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 NISHIYAMA HIDETOSHI;SHIMURA KEI;UTO SACHIO;NOGUCHI MONORI
分类号 G01N21/00;G01N21/55 主分类号 G01N21/00
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