| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for semiconductor elements which is capable of obtaining a uniform plating thickness by an electroless plating that is used in a bump manufacturing process and a bonding pad rearrangement pattern manufacturing process in the manufacturing process for a semiconductor element. <P>SOLUTION: This manufacturing method has the process for preparing a semiconductor substrate 102 whose bonding pad 106 is exposed outside, the process for forming a seed layer which is formed by a multilayer film on the semiconductor substrate 102, the process for forming a metal wiring in a plating method which has a predetermined pattern on the seed layer, the process for removing only the part except for the metal wiring of the film of the uppermost layer which was used in the plating of the seed layer formed by the multilayer film and connecting all the metal wiring by the seed layer, the process for forming a surface conductive layer by an electroless plating on the metal wiring, and the process for removing the seed layer remaining on the semiconductor substrate 102. <P>COPYRIGHT: (C)2009,JPO&INPIT |
