| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency semiconductor device for which the mechanical strength of air bridge wiring is improved. SOLUTION: The semiconductor device includes: a first wiring layer 12 formed on a semiconductor substrate 11; second and third wiring layers 13-1 and 13-2 disposed in a direction intersecting with the first wiring layer 12 on both sides of the first wiring layer 12; and an air bridge wiring layer 14 for interconnecting the second and third wiring layers 13-1 and 13-2 sandwiching an air layer above the first wiring layer 12 therewith. The overall shape of the air bridge wiring layer 14 has an upward convex curvature in an arch shape and the transverse sectional shape of the air bridge wiring 14 is in the form of a downward concave curvature. COPYRIGHT: (C)2009,JPO&INPIT |
