| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for etching an opening with reduced critical dimensions in a substrate layer. SOLUTION: A multilayer mask including a lithographically patterned photoresist and an unpatterned organic antireflection coating (BARC) is formed on a substrate layer to be etched. The BARC layer is etched with a significant negative etching bias, to reduce the critical dimension of the opening in the multilayer mask to be smaller than the lithographically defined dimension in the photoresist. The significant negative etching bias of the BARC etching is then utilized to etch an opening, having a reduced critical dimension into the substrate layer. For plasma-etching an opening in the BARC with a large negative etching bias, a polymerizing chemical, such as CHF<SB>3</SB>, is utilized. In another embodiment, the polymerizing chemical provided at a low pressure is applied with a voltage, at relatively lower power by a high-frequency capacitively coupled source. COPYRIGHT: (C)2009,JPO&INPIT |
