| 摘要 |
An n/p semiconductor substrate is formed in such a manner that an n type semiconductor layer is deposited on a p<SUP>+</SUP> semiconductor substrate. An imaging area including a plurality of n type semiconductor regions making photoelectric conversion and a plurality of p type semiconductor region for isolation formed around the n type semiconductor regions, is formed in the n/p semiconductor substrate. The n type semiconductor layer is divided into an upper layer and a lower layer. A second n type semiconductor region is formed to connect to the p<SUP>+</SUP> type semiconductor substrate from a surface of the n/p semiconductor substrate in a peripheral region of the imaging area.
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