发明名称 Conductive structures, non-volatile memory device including conductive structures and methods of manufacturing the same
摘要 Conductive structures in an integrated circuit device including an integrated circuit substrate and first conductive layer patterns on the substrate. Second conductive layer patterns are on the substrate extending between respective ones of the first conductive layer patterns. Adjacent ones of the first and second conductive layer patterns are on different horizontal planes relative to the substrate to reduce parasitic capacitance therebetween.
申请公布号 US2008272423(A1) 申请公布日期 2008.11.06
申请号 US20080151033 申请日期 2008.05.02
申请人 CHOI BYUNG-YONG;PARK KYU-CHARN;LEE CHOONG-HO 发明人 CHOI BYUNG-YONG;PARK KYU-CHARN;LEE CHOONG-HO
分类号 H01L29/00;H01L21/44 主分类号 H01L29/00
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