P-CHANNEL NANOCRYSTALLINE DIAMOND FIELD EFFECT TRANSISTOR

摘要

An electrically conducting p-channel diamond lattice field effect transistor (DLFET) composed of nanocrystalline diamond having at least about 10²⁰ atoms/cm³ of boron in conduction channel is disclosed, along with methods of making the same. The nanocrystalline diamond may be characterized by having an average grain size diameter of less than 1 µm, and in particular, grain sizes on the order of 10 to 20 nm, for improved performance of the DLFET.