发明名称 |
Switched bitline VTH sensing for non-volatile memories |
摘要 |
A transistor provides a voltage source commonly switched by SE and SO switches to pre-charge both the even bitline and the odd bitline. The SE and SO switches are open during a sensing stage to determine whether the cell side or the reference side has a higher current and determine the charge stored by a memory cell transistor.
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申请公布号 |
US2008273397(A1) |
申请公布日期 |
2008.11.06 |
申请号 |
US20070799967 |
申请日期 |
2007.05.03 |
申请人 |
HENDRICKSON NICHOLAS T;TEDROW KERRY D |
发明人 |
HENDRICKSON NICHOLAS T.;TEDROW KERRY D. |
分类号 |
G11C7/12;G11C11/34 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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