发明名称 Switched bitline VTH sensing for non-volatile memories
摘要 A transistor provides a voltage source commonly switched by SE and SO switches to pre-charge both the even bitline and the odd bitline. The SE and SO switches are open during a sensing stage to determine whether the cell side or the reference side has a higher current and determine the charge stored by a memory cell transistor.
申请公布号 US2008273397(A1) 申请公布日期 2008.11.06
申请号 US20070799967 申请日期 2007.05.03
申请人 HENDRICKSON NICHOLAS T;TEDROW KERRY D 发明人 HENDRICKSON NICHOLAS T.;TEDROW KERRY D.
分类号 G11C7/12;G11C11/34 主分类号 G11C7/12
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