| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a flash memory device and its program method by which program disturbance can be decreased. <P>SOLUTION: The flash memory device is provided with a voltage generating circuit generating program voltage, pass voltage, and high voltage, a plurality of planes performing program operation in response to the program voltage provided from the voltage generating circuit, the pass voltage, and the high voltage, and verifying a state of program pass or program fail, and a control logic controlling the planes in response to the verified result of the planes, the control logic controls the planes so as to cut off the program voltage and the pass voltage, or the high voltage applied to the planes being program-passed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
