A semiconductor process and apparatus provide a T-shaped structure (96) formed from a polysilicon structure (10) and an epitaxially grown polysilicon layer (70) and having a narrower bottom critical dimension (e.g., at or below 40 nm) and a larger top critical dimension (e.g., at or above 40 nm) so that a silicide may be formed from a first material (such as CoSi<SUB>2</SUB>) in at least the upper region (90) of the T-shaped structure (96) without incurring the increased resistance caused by agglomeration and voiding that can occur with certain silicides at the smaller critical dimensions.
申请公布号
WO2007136884(A3)
申请公布日期
2008.11.06
申请号
WO2007US60302
申请日期
2007.01.10
申请人
FREESCALE SEMICONDUCTOR INC.;HALL, MARK D.;JAWARANI, DHARMESH;SHROFF, MEHUL D.;TRAVIS, EDWARD O.
发明人
HALL, MARK D.;JAWARANI, DHARMESH;SHROFF, MEHUL D.;TRAVIS, EDWARD O.