发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To supply a desired voltage by suppressing the effect of variation in the threshold voltage of a transistor. <P>SOLUTION: A semiconductor device is provided which cancels variation in threshold voltage or variation in gate-source voltage between transistors by acquiring, holding and adding to a signal potential input thereafter a voltage corresponding to the gate-source voltage or the threshold voltage of a transistor inputting an analog signal and a transistor including a function as a constant current source. For acquiring and holding the voltage corresponding to the gate-source voltage or to the threshold voltage, switches provided between the gate and the source and between the gate and the drain of the transistor and a capacitor provided between the gate and source are used. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008271591(A) 申请公布日期 2008.11.06
申请号 JP20080148751 申请日期 2008.06.06
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KIMURA HAJIME;SHIINA YASUKO
分类号 H03F1/30;H01L29/786;H03K19/003;H03K19/017 主分类号 H03F1/30
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