| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which an appropriate etching can be conducted, such that an altered resist substance is not left when an oxidized film is wet-etched. SOLUTION: The method for manufacturing a semiconductor device is characterized that the method comprises a step of forming an oxide film 1 on a substrate, a step of forming a resist pattern 2 on the oxide film 1, a step of etching the oxide film 1 by using the resist pattern 2 as a mask, a step of water-washing and drying the substrate, and a step of removing the resist pattern 2, wherein the step of removing the resist pattern 2 is a step of dipping the substrate in a mixture liquid of sulfuric acid and hydrogen peroxide after a step of water-washing the substrate without drying the substrate. COPYRIGHT: (C)2009,JPO&INPIT |
