发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To prevent electrical contact failure between a through electrode and a pad from occurring on a substrate having a through electrode. SOLUTION: The through electrode 3 is set to be a protruded electrode 10, where height can be made nearly equal. After electrode insertion into a through hole 2a for an electrode formed on a first semiconductor substrate 1, electrical connection is made to a pad 6 formed on a second semiconductor substrate 5. After that, a sealing resin 4 is filled through a through hole 9 for sealing. As a result, the through electrode 3 composed of the protruding electrode 10 can be connected to the pad 6 electrically and reliably. The through electrode 3 is connected to the pad 6 before sealing with the sealing resin 4, thus preventing failure in electric connection between the through electrode 3 and a pad 8 with the sealing resin 4. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008270601(A) 申请公布日期 2008.11.06
申请号 JP20070112988 申请日期 2007.04.23
申请人 DENSO CORP 发明人 ISHIKAWA EIJI;SUGIURA KAZUHIKO
分类号 H01L25/065;H01L21/60;H01L25/07;H01L25/18 主分类号 H01L25/065
代理机构 代理人
主权项
地址