发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device which can form semiconductor layer with a constricting structure without being oxidized, and to improve the reliability of the semiconductor device. SOLUTION: A manufacturing method of surface-emitting laser element 100, equipped with a plurality of semiconductor layers by being laminated, comprises a mask-forming process of forming a mask layer 16 on a spacer layer 6; a selective growth process processing, in selective growing a current-constricting layer 7 at a growth temperature which is lower than the removing temperature, at which the mask layer 16 is removed from the spacer layer 6 through heat in a region on the spacer layer 16, other than the mask layer 6; and a mask-removing process of removing the mask layer 16 from the spacer layer 6 through heat, by heating the mask layer 16 to the removing temperature. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008270790(A) 申请公布日期 2008.11.06
申请号 JP20080081185 申请日期 2008.03.26
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 KAWAKITA YASUMASA;KAGEYAMA TATSUO
分类号 H01S5/183;H01S5/343 主分类号 H01S5/183
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