发明名称 |
ORGANIC FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To further enhance carrier mobility without deteriorating n-type transistor characteristics by composing both a semiconductor layer and an insulator layer material with organic compounds and further using macromolecular substances having no hydroxide group as a substance that forms the insulator layer in a TFT having a conductive layer/insulator layer/semiconductor layer structure. SOLUTION: In an organic field effect transistor (OFET) having the conductor layer 2/insulator layer 3/semiconductor layer 4 structure, the substance that forms the semiconductor layer 4 is an organic compound, and the substance that forms the insulator layer 3 includes a macromolecule obtained by polymerizing or copolymerizing a monomer expressed by the chemical formula (1): CH<SB>2</SB>=CHCOO-(CH<SB>2</SB>)<SB>2</SB>-CN and/or a monomer expressed by the chemical formula (2): CH<SB>2</SB>=C(CH<SB>3</SB>)COO-(CH<SB>2</SB>)<SB>2</SB>-CN. Therefore, carrier mobility can be further enhanced without deteriorating the n-type transistor characteristics. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2008270752(A) |
申请公布日期 |
2008.11.06 |
申请号 |
JP20080057321 |
申请日期 |
2008.03.07 |
申请人 |
OSAKA UNIV;SHIN ETSU CHEM CO LTD |
发明人 |
TANIGUCHI MASATERU;KAWAI TOMOJI;KAWAGUCHI HIDEYUKI;FUKUI IKUO |
分类号 |
H01L29/786;H01L21/312;H01L51/05;H01L51/30 |
主分类号 |
H01L29/786 |
代理机构 |
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地址 |
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