发明名称 METHOD OF FORMING SILICON FILM
摘要 PROBLEM TO BE SOLVED: To provide a formation method of a silicon film capable of utilizing an Si constituent in a liquid silicon material efficiently. SOLUTION: The formation method of a silicon film includes: a process for applying a liquid material including a compound having at least a polymerization starting terminal onto a substrate; a process for applying a liquid material including at least a silicide onto the substrate; and a process for stopping a polymerization reaction. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008270590(A) 申请公布日期 2008.11.06
申请号 JP20070112711 申请日期 2007.04.23
申请人 SEIKO EPSON CORP 发明人 KATO MAKOTO
分类号 H01L21/20;H01L21/208 主分类号 H01L21/20
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