SPIN-TORQUE MRAM CELL ARRAY, SPIN-TORQUE MRAM DEVICE, AND PROGRAMMING METHOD OF SPIN-TORQUE MRAM CELL ARRAY

摘要

PROBLEM TO BE SOLVED: To provide a spin-torque MRAM cell array of which the area occupied by wirings taken around in the spin-torque MRAM cell array is made small, a spin-torque MRAM device, and a programming method of the spin-torque MRAM cell array. SOLUTION: The spin-torque MRAM cell array 405 has spin-torque MRAM cells 100 (henceforth "MRAM cell 100") arrayed in rows and columns. Bit lines 305 are arranged along each column and connected to each of the MRAM cells 100. Source select lines 330 are oriented orthogonally to the bit lines 305 and arranged by corresponding to a pair of rows of the MRAM cells 100 arrayed in rows to connect with the MRAM cells 100 composing this pair. In the MRAM cells 100, a first logic level (0) is written in a first step and a second logic level (1) is written in a second step. COPYRIGHT: (C)2009,JPO&INPIT