发明名称 |
CURRENT DRIVEN MEMORY CELLS HAVING ENHANCED CURRENT AND ENHANCED CURRENT SYMMETRY |
摘要 |
A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on. |
申请公布号 |
EP1987581(A2) |
申请公布日期 |
2008.11.05 |
申请号 |
EP20070751427 |
申请日期 |
2007.02.22 |
申请人 |
GRANDIS, INC. |
发明人 |
HUAI, YIMING;CHEN, EUGENE |
分类号 |
G11C11/16;G11C11/00 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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