Non-volatile memory with quick writing

摘要

The method involves providing non-volatile main and auxiliary memory areas (MA, XA) having respective target and auxiliary pages, in a non volatile memory e.g. flash memory. A look-up table i.e. valid address map table (VAM) is provided for associating a valid auxiliary page address (XAD) to an invalid target page address (RAD). Data and the target page address are written in an erased auxiliary page, the target page is invalidated and the table is updated based on a writing command of data in the target page, using a control unit (CU). An independent claim is also included for a memory system comprising a control unit.