| 摘要 |
1285258 Semi-conductor devices SIEMENS AG 28 Oct 1970 [29 Oct 1969] 5l099/70 Heading H1K Conductive tracks on semi-conductor substrates are produced by depositing a bonding metal layer 2, e.g. of titanium over the entire surface of a substrate 1; depositing a blocking layer 3, e.g. of platinum, over the layer 2; depositing a protective layer 4, e.g. of molybdenum, on the layer 3; masking the layer 4 with a photoresist material 5 so as to expose only that area which subsequently comprises the track; etching away the exposed portion of layer 4, depositing a gold layer 6, electrolytically, on the exposed portion of layer 3; and finally removing the masking material, the remainder of layer 4, and the portions of layers 2 and 3 not below the gold region 6. The layers 4 and 2 may be removed chemically, the layer 3 by means of ion beam etching. Alternative protective layers may be aluminium, titanium or silicon dioxide. |
