| 摘要 |
<p>The property of transistor can be improved by solving he problem generated in case of using the dual polysilicon gate. The light oxidation process is performed on the laminate pattern and pad nitride layer to form the light oxidation film. The light oxidation film is etched by anisotropic etching and the light oxide layer space(16a) is formed on the side wall of the laminate pattern of the metal layer pattern(20a) and hard mask film pattern(22a). The pad nitride layer is removed by using the phosphoric acid. A transistor is formed by performing the post process such as the landing plug contact formation process.</p> |
