| 发明名称 |
POWER SEMICONDUCTOR DEVICE WITH INTERCONNECTED GATE TRENCHES |
| 摘要 |
A power semiconductor device which includes a plurality of gate trenches and a perimeter trench intersecting the gate trenches. |
| 申请公布号 |
EP1917683(A4) |
申请公布日期 |
2008.11.05 |
| 申请号 |
EP20060801678 |
申请日期 |
2006.08.16 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
MA, LING;AMALI, ADAM I.;TURNER, RUSSELL |
| 分类号 |
H01L29/78;H01L29/40;H01L29/417;H01L29/423;H01L29/739 |
主分类号 |
H01L29/78 |
| 代理机构 |
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