发明名称 |
Amorphous selenium flat panel X-ray imager for tomosynthesis and static imaging |
摘要 |
A flat panel x-ray imager exhibiting reduced ghosting effects and overvoltage protection by appropriate leakage current characteristics of the thin-film transistor array. A top electrode of a suitable material is directly on a non-insulating organic layer. The organic layer is directly on an amorphous selenium-based charge generator layer allowing charge transport across the layer, thereby reducing ghosting. The thin-film transistors have leakage current that rises relatively slowly with voltage across the transistor within a range that matches exposure through an object being imaged but rises at a sufficiently higher rate within a higher range to provide protection even when a corresponding region of the charge generator layer receives greater amounts of x-rays. |
申请公布号 |
EP1814156(A3) |
申请公布日期 |
2008.11.05 |
申请号 |
EP20070250338 |
申请日期 |
2007.01.26 |
申请人 |
HOLOGIC, INC. |
发明人 |
BOGDANOVICH, SNEZANA;CHEUNG, LAWRENCE;JING, ZHENXUE;PARIKH, SAMIR |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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