| 发明名称 |
Method of manufacturing radiating plate and semiconductor apparatus using the same |
| 摘要 |
A method of manufacturing a radiating plate using In as a thermal conducting bonding material 20 provided between a semiconductor device and a radiating plate 14 and serving to bond a back surface of the semiconductor device to the radiating plate, includes the steps of carrying out a cleaning treatment for cleaning a surface of the radiating plate 14 , supplying the In to the radiating plate 14 , heating and melting the In and hermetically adhering the In 18 to the radiating plate, thereby obtaining an In integral type radiating plate.
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| 申请公布号 |
US7445965(B2) |
申请公布日期 |
2008.11.04 |
| 申请号 |
US20050096058 |
申请日期 |
2005.03.31 |
| 申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
AKAGAWA MASATOSHI;NAKAZAWA MASAO;NAKAZAWA HIDETO |
| 分类号 |
H01L21/00;H01L23/40;H01L21/44;H01L21/48;H01L21/50;H01L23/34;H01L23/36;H01L23/373 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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