| 摘要 |
<p>The method of manufacturing the semiconductor device is provided to change the mobile to the ion fixed ion by using HCl diffusion to prevent a Vt variation of mobile ion generated in a space wall. The gate oxide film layer, and floating gate layer and oxide-nitride-oxide layer and control gate layer successively are deposited on the semiconductor substrate(301). The exposure process using the reticle of the arbitrary pattern and the photolithography process are performed. A part of PR deposited is selectively removed and the PR pattern is formed. The etching process is performed using a mask as the PR pattern. The gate oxide film(303) classified by the gate pattern, the floating gate(305), the ONO(307) and control gate(309) are formed.</p> |
