| 摘要 |
A radiation-emitting semiconductor chip, having a multilayer structure ( 100 ) containing a radiation-emitting active layer ( 10 ), and having a window layer ( 20 ), which is transmissive to a radiation emitted by the active layer ( 10 ) and is arranged downstream of the multilayer structure ( 100 ) in the direction of a main radiating direction of the semiconductor component. The window layer ( 20 ) has at least one peripheral side area ( 21 ), which, in the course from a first main area ( 22 ) facing the multilayer structure ( 100 ) in the direction toward a second main area ( 23 ) remote from the multilayer structure ( 100 ), firstly has a first side area region ( 24 ) which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area ( 22 ). A peripheral side area ( 11 ) of the multilayer structure ( 100 ) and at least a part of the beveled, curved or stepped first side area region ( 24 ) are coated with a continuous electrically insulating layer ( 30 ). A radiation-emitting component is disclosed having a chip of this type, and also disclosed is a method for simultaneously producing a multiplicity of such chips.
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